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IPP90R500C3

N-Channel MOSFET

IPP90R500C3 Features

* Static drain-source on-resistance: RDS(on) ≤0.5Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* High peak current capability

* Ultra low gate charge

IPP90R500C3 General Description


*High peak current capability
*Ultra low gate charge
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 156 T.

IPP90R500C3 Datasheet (241.67 KB)

Preview of IPP90R500C3 PDF

Datasheet Details

Part number:

IPP90R500C3

Manufacturer:

INCHANGE

File Size:

241.67 KB

Description:

N-channel mosfet.

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IPP90R500C3 N-Channel MOSFET INCHANGE

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