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IRF840S N-Channel MOSFET

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Description

isc N-Channel Mosfet Transistor *.

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Datasheet Specifications

Part number
IRF840S
Manufacturer
INCHANGE
File Size
248.47 KB
Datasheet
IRF840S-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Designed for high voltage, high speed switching power ap

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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