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IRFB4510 - N-Channel MOSFET

IRFB4510 Description

isc N-Channel MOSFET Transistor IRFB4510，IIRFB4510 *.

IRFB4510 Features

* Static drain-source on-resistance: RDS(on) ≤13.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4510 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 62 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRFB4510
Manufacturer
INCHANGE
File Size
240.55 KB
Datasheet
IRFB4510-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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