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IRFR5305 - P-Channel MOSFET

IRFR5305 Description

isc P-Channel MOSFET Transistor IRFR5305 *.

IRFR5305 Features

* Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFR5305 Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temper

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Datasheet Details

Part number
IRFR5305
Manufacturer
INCHANGE
File Size
281.53 KB
Datasheet
IRFR5305-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
INCHANGE IRFR5305-like datasheet

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