IXFP56N30X3 Datasheet - INCHANGE

IXFP56N30X3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IXFP56N30X3 *

Features

* Static drain-source on-resistance: RDS(on) ≤ 27mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% Avalanche Tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IXFP56N30X3-INCHANGE.pdf