IXTA160N04T2 Datasheet, MOSFET, INCHANGE

IXTA160N04T2 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 5mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot v

PDF File Details

Part number:

IXTA160N04T2

Manufacturer:

INCHANGE

File Size:

251.17kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTA160N04T2 Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID

TAGS

IXTA160N04T2

INCHANGE

📁 Related Datasheet

IXTA160N04T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM.

IXTA160N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTA160N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA160N075T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160.

IXTA160N085T - Power MOSFET (IXYS)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .

IXTA160N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTA160N10T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) .

IXTA160N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTA160N10T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160.

IXTA16N50P - PolarHV Power MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (.