* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99347(02/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g
IXTA160N085T Datasheet (131.25 KB)
IXTA160N085T
IXYS
131.25 KB
Power mosfet.
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .
📁 Related Datasheet
IXTA160N085T N-Channel MOSFET (INCHANGE)
IXTA160N04T2 N-Channel MOSFET (INCHANGE)
IXTA160N04T2 Power MOSFET (IXYS)
IXTA160N075T Power MOSFET (IXYS Corporation)
IXTA160N075T N-Channel MOSFET (INCHANGE)
IXTA160N075T7 Power MOSFET (IXYS Corporation)
IXTA160N10T Power MOSFET (IXYS Corporation)
IXTA160N10T N-Channel MOSFET (INCHANGE)
IXTA160N10T7 Power MOSFET (IXYS Corporation)
IXTA16N50P PolarHV Power MOSFET (IXYS)
