IXTA16N50P
IXYS
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Polarhv power mosfet.
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IXTA16N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA16N50P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche volta.
IXTA160N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA160N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA160N04T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N04T2 IXTP160N04T2
Symbol
VDSS VDGR
VGSM
ID25 IL(RMS) IDM
IA EAS
PD
TJ TJM.
IXTA160N075T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T IXTP160N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTA160N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA160N075T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 160.
IXTA160N085T - Power MOSFET
(IXYS)
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
.
IXTA160N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA160N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTA160N10T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP160N10T
VDSS = ID25 =
RDS(on) .
IXTA160N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA160N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol.