IXTA160N10T7 Datasheet - IXYS Corporation

IXTA160N10T7 Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.

IXTA160N10T7 Features

* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BV

IXTA160N10T7-IXYSCorporation.pdf