* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BV
IXTA160N10T7 Datasheet (158.89 KB)
IXTA160N10T7
IXYS Corporation
158.89 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 160.
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