IXTA1R4N100P Datasheet, Mosfet, INCHANGE

IXTA1R4N100P Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot

PDF File Details

Part number:

IXTA1R4N100P

Manufacturer:

INCHANGE

File Size:

251.22kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTA1R4N100P Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IXTA1R4N100P

INCHANGE

📁 Related Datasheet

IXTA1R4N100P - Power MOSFET (IXYS)
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .

IXTA1R4N120P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.

IXTA1R6N100D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VD.

IXTA1R6N100D2HV - High Voltage Depletion Mode Power MOSFET (IXYS)
High Voltage Depletion Mode Power MOSFET IXTA1R6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJ.

IXTA1R6N50D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditio.

IXTA100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTA100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTA100N15X4 - Power MOSFET (IXYS)
X4-Class Power MOSFETTM Advance Technical Information IXTA100N15X4 IXTP100N15X4 VDSS = ID25 = RDS(on) 150V 100A 11.5m N-Channel Enhancement Mode.

IXTA102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTA102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA102N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.