IXTA1R6N100D2HV Datasheet - IXYS

IXTA1R6N100D2HV - High Voltage Depletion Mode Power MOSFET

High Voltage Depletion Mode Power MOSFET IXTA1R6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 100 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditi.

IXTA1R6N100D2HV Features

*  High Voltage package

* High Blocking Voltage

* Normally ON Mode

*  International Standard Package

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applicatio

IXTA1R6N100D2HV-IXYS.pdf