IXTA1R6N100D2HV High Voltage Depletion Mode Power MOSFET

IXYS

Description

High Voltage Depletion Mode Power MOSFET IXTA1R6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJ.

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Datasheet Specifications

Part number: IXTA1R6N100D2HV
Manufacturer: IXYS
File Size: 226.30 KB
Datasheet: IXTA1R6N100D2HV-IXYS.pdf
Description: High Voltage Depletion Mode Power MOSFET

Features

*  High Voltage package
* High Blocking Voltage
* Normally ON Mode
*  International Standard Package
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* Easy to Mount
* Space Savings
* High Power Density Applicatio

Applications

* Audio Amplifiers
* Start-Up Circuits
* Protection Circuits
* Ramp Generators
* Current Regulators
* Active Loads © 2019 IXYS CORPORATION, All Rights Reserved DS100778B(11/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs V

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IXTA1R6N100D2HV High Voltage Depletion Mode Power MOSFET IXYS

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