IXTA1R4N120P
IXYS
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Power mosfet.
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IXTA1R4N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P
VDSS ID25
RDS(on)
= 1000V = 1.4A ≤ 11.8Ω
.
IXTA1R4N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA1R6N100D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 1.6A
10
TO-252 (IXTY)
G S
Symbol
VD.
IXTA1R6N100D2HV - High Voltage Depletion Mode Power MOSFET
(IXYS)
High Voltage Depletion Mode Power MOSFET
IXTA1R6N100D2HV
D
VDSX = ID(on) >
RDS(on)
1000V 1.6A
10
N-Channel
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJ.
IXTA1R6N50D2 - N-Channel MOSFET
(IXYS Corporation)
Depletion Mode MOSFET
N-Channel
IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2
D
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditio.
IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTA100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.
IXTA102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTA102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.