IXTA48P05T Datasheet, Mosfet, INCHANGE

PDF File Details

Part number:

IXTA48P05T

Manufacturer:

INCHANGE

File Size:

247.74kb

Download:

📄 Datasheet

Description:

P-channel mosfet.

TAGS

IXTA48P05T

INCHANGE

📁 Related Datasheet

IXTA48P05T - Power MOSFET (IXYS)
TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enha.

IXTA48N20T - Power MOSFET (IXYS)
TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID2.

IXTA48N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA42N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA42N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.

IXTA42N15T - Power MOSFET (IXYS)
TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDS.

IXTA42N25P - Power MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated T.

IXTA44P15T - Power MOSFET (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T VDSS.

IXTA460P2 - Power MOSFET (IXYS)
PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 TO-22.

IXTA460P2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 270mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA4N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and curre.