| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
IXYS Corporation | IXTK250N10 | MOSFET N-CH 100V 250A TO264 | DigiKey | 0 | 25 units |
$10.79
|
🛒 Buy Now |
Download Datasheet (246.37 KB)
IXTK250N10
INCHANGE
246.37 KB
N-channel mosfet.
isc N-Channel MOSFET Transistor
*FEATURES *Drain Source Voltage-
: VDSS= 100V(Min) *Static Drain-So.
urce On-Resistance
: RDS(on) = 5mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot v.
📁 Related Datasheet
IXTK250N10, IXYS Corporation
Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 250N10
VDSS ID25
RDS(on)
= 100 V = 250 A = 5 mΩ
Symbol VD.
IXTK200N10L2, INCHANGE
Isc N-Channel MOSFET Transistor
IXTK200N10L2
·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% .
IXTK200N10L2, IXYS
Advance Technical Information
Linear L2TM Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated
Symbol VDSS VDGR.
IXTK200N10P, IXYS Corporation
PolarHTTM Power MOSFET
IXTK 200N10P
N-Channel Enhancement Mode Avalanche Rated
V = 100 V DSS
ID25 = 200 A RDS(on) ≤ 7.5 mΩ
Symbol
VDSS VDGR
VGS VG.
IXTK200N10P, INCHANGE
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7.5mΩ(Max) ·Fast Sw.
IXTK20N150, IXYS
High Voltage Power MOSFETs w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA
IXTK20N150 IXTX20N150
Symbol
VDSS VDGR
VGSS.
IXTK21N100, IXYS Corporation
High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol V.
IXTK240N075L2, INCHANGE
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max) ·Fast Switc.
