* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99118E(12/05) Symbol gfs C iss C oss C rss td(on) tr td(off) tf
IXTK100N25P Datasheet (265.34 KB)
IXTK100N25P
IXYS Corporation
265.34 KB
N-channel mosfet.
PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ.
📁 Related Datasheet
IXTK102N30P PolarHT Power MOSFET (IXYS Corporation)
IXTK102N30P N-Channel MOSFET (INCHANGE)
IXTK102N65X2 Power MOSFET (IXYS)
IXTK110N20L2 Power MOSFET (IXYS)
IXTK110N20L2 N-Channel MOSFET (INCHANGE)
IXTK120N20P PolarHT Power MOSFET (IXYS)
IXTK120N20P N-Channel MOSFET (INCHANGE)
IXTK120N25 Power MOSFET (IXYS Corporation)
IXTK120N25P PolarHT Power MOSFET (IXYS Corporation)
IXTK120N65X2 Power MOSFET (IXYS)
