IXTK120N25P Datasheet - IXYS Corporation

IXTK120N25P PolarHT Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-264 Maximum Ra.

IXTK120N25P Features

* z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and

IXTK120N25P Datasheet (165.99 KB)