* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V D
IXTK120N25 Datasheet (574.21 KB)
IXTK120N25
IXYS Corporation
574.21 KB
Power mosfet.
High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 120N25
VDSS =
ID25
=
= RDS(on)
250 V
120 A 20 mΩ
Symbol Test c.
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