IXTK120N25 Datasheet - IXYS Corporation

IXTK120N25, Power MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test c.

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IXTK120N25_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTK120N25

Manufacturer:

IXYS Corporation

File Size:

574.21 KB

Description:

Power MOSFET

Features

* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V D

Applications

* Motorcontrols
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density © 2003 IXYS All rights reserved DS98879D(11/03) IXTK 120N25 Symbol Test Cond

IXTK120N25 Distributors

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IXTK120N25 Power MOSFET IXYS Corporation

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