IXTK120N25 Power MOSFET

IXYS Corporation

Description

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test c.

📥 Download Datasheet

IXTK120N25 Datasheet Preview — Preview of IXTK120N25 PDF

Datasheet Specifications

Part number: IXTK120N25
Manufacturer: IXYS Corporation
File Size: 574.21 KB
Datasheet: IXTK120N25_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V D

Applications

* Motorcontrols
* DC choppers
* Switched-mode power supplies Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density © 2003 IXYS All rights reserved DS98879D(11/03) IXTK 120N25 Symbol Test Cond

IXTK120N25 Distributors

📁 Related Datasheet

IXTK120N20P IXTK120N65X2 IXTK102N65X2 IXTK110N20L2 IXTK150N15P IXTK160N20

📌 All Tags

IXTK120N25 Power MOSFET IXYS Corporation

IXYS Corporation IXTK120N25-like datasheet