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IXTK140N20P Datasheet - IXYS Corporation

IXTK140N20P Power MOSFET

PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150°.

IXTK140N20P Features

* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99194E(12/05) IXTK 140N20P Symbol gfs Ciss Coss Crss td(on) tr td

IXTK140N20P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTK140N20P

Manufacturer:

IXYS Corporation

File Size:

203.83 KB

Description:

Power mosfet.

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IXTK140N20P IXTK140N20P Power MOSFET IXYS Corporation

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