IXTK17N120L Datasheet - IXYS

IXTK17N120L Power MOSFET

LinearTM Power MOSFET w/ Extended FBSOA IXTK17N120L IXTX17N120L N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA VDSS ID25 RDS(on) = 1200V = 17A < 900mΩ TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063 in.) from case for 10s Plastic body for 10s Mounting torqu.

IXTK17N120L Features

* z Designed for Linear Operations z Guaranteed FBSOA at 60ºC z Avalanche Rated z Low RDS(on) HDMOSTM Process z Molding Epoxies Meet UL94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z Programmable Loads z Current Regulators z DC-DC Conve

IXTK17N120L Datasheet (155.73 KB)