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IXTK150N15P, IXTQ150N15P Datasheet - IXYS Corporation

IXTK150N15P - Power MOSFET

PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 V 150 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) I DM IAR EAR EAS TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C 150 A 75 A 34.

IXTK150N15P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99299E(03/06) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(

IXTQ150N15P_IXYSCorporation.pdf