IXTK102N30P Datasheet - IXYS Corporation

IXTK102N30P - PolarHT Power MOSFET

www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG =.

IXTK102N30P Features

* l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-264 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g Advantages l l l Easy to mount Space savi

IXTK102N30P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTK102N30P

Manufacturer:

IXYS Corporation

File Size:

245.69 KB

Description:

Polarht power mosfet.

IXTK102N30P Distributor

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IXTK102N30P PolarHT Power MOSFET IXYS Corporation