IXTK128N15 Datasheet - IXYS Corporation

IXTK128N15 Power MOSFET

Advance Technical Information www.DataSheet4U.com High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 128 A = 15 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD.

IXTK128N15 Features

* W °C °C °C °C International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 Nm/lb.in. 10

IXTK128N15_IXYSCorporation.pdf