* W °C °C °C °C International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 Nm/lb.in. 10
IXTK128N15 Datasheet (98.12 KB)
IXTK128N15
IXYS Corporation
98.12 KB
Power mosfet.
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High Current Mega MOSTMFET
N-Channel Enhancement Mode
IXTK 128N15
VDSS ID25
RDS(on)
= 150 V = 12.
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