Advance Technical Information www.DataSheet4U.com High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 128 A = 15 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD
IXTK128N15_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTK128N15
Manufacturer:
IXYS Corporation
File Size:
98.12 KB
Description:
Power mosfet.