IXTK200N10P - Power MOSFET

IXYS Corporation

Datasheet Details

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99186E(10/05) IXTK 200N10P Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 60 97 S DS D D25 VGS = 0 V,.

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Published: Apr 13, 2010 |