Part number:
IXTK200N10P
Manufacturer:
IXYS Corporation
File Size:
203.99 KB
Description:
Power mosfet.
IXTK200N10P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTK200N10P
Manufacturer:
IXYS Corporation
File Size:
203.99 KB
Description:
Power mosfet.
IXTK200N10P, Power MOSFET
PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL T SOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC
IXTK200N10P Features
* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99186E(10/05) IXTK 200N10P Symbol g fs Ciss Coss Crss td(on) tr t
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