* l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99186E(10/05) IXTK 200N10P Symbol g fs Ciss Coss Crss td(on) tr t
IXTK200N10P Datasheet (203.99 KB)
IXTK200N10P
IXYS Corporation
203.99 KB
Power mosfet.
PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol VDSS VDGR VGS VG.
📁 Related Datasheet
IXTK200N10L2 N-Channel MOSFET (INCHANGE)
IXTK200N10L2 Power MOSFET (IXYS)
IXTK200N10P N-Channel MOSFET (INCHANGE)
IXTK20N150 High Voltage Power MOSFETs (IXYS)
IXTK21N100 Power MOSFET (IXYS Corporation)
IXTK240N075L2 N-Channel MOSFET (INCHANGE)
IXTK240N075L2 Power MOSFET (IXYS)
IXTK250N10 Power MOSFET (IXYS Corporation)
IXTK250N10 N-Channel MOSFET (INCHANGE)
IXTK100N25P N-Channel MOSFET (IXYS Corporation)
