IXTK250N10 Datasheet (IXYS Corporation)

IXTK250N10, Power MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C,

IXTK250N10 Features

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Applications

* Motor controls

* DC choppers

* Switched-mode power supplies

* DC-DC Converters

* Linear Reg