IXTK250N10 Datasheet - IXYS Corporation

IXTK250N10 Power MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, .

IXTK250N10 Features

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* International standard package

* Fast switching times Applications

* Motor controls

* DC choppers

* Switched-mode power supplies

* DC-DC Converters

* Linear Reg

IXTK250N10_IXYSCorporation.pdf

IXTK250N10 Datasheet Preview — Preview of IXTK250N10 PDF

Datasheet Details

Part number:

IXTK250N10

Manufacturer:

IXYS Corporation

File Size:

69.30 KB

Description:

Power mosfet.

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IXTK250N10 IXTK250N10 Power MOSFET IXYS Corporation

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