Part number:
IXTK250N10
Manufacturer:
IXYS Corporation
File Size:
69.30 KB
Description:
Power mosfet.
IXTK250N10_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTK250N10
Manufacturer:
IXYS Corporation
File Size:
69.30 KB
Description:
Power mosfet.
IXTK250N10, Power MOSFET
Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C,
IXTK250N10 Features
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package
* Fast switching times Applications
* Motor controls
* DC choppers
* Switched-mode power supplies
* DC-DC Converters
* Linear Reg
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