IXTK250N10 Power MOSFET

IXYS Corporation

Description

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VD.

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Datasheet Specifications

Part number: IXTK250N10
Manufacturer: IXYS Corporation
File Size: 69.30 KB
Datasheet: IXTK250N10_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* International standard package

Applications

* Motor controls
* DC choppers
* Switched-mode power supplies
* DC-DC Converters
* Linear Regulators Advantages
* Easy to mount with one screw (isolated mounting screw hole)
* Space savings
* High power density Symbol Test Conditions (TJ

IXTK250N10 Distributors

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IXTK250N10 Power MOSFET IXYS Corporation

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