IXTK128N15 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTK128N15
Manufacturer: INCHANGE
File Size: 248.09 KB
Datasheet: IXTK128N15-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 150V(Min)
* Static drain-source on-resistance : RDS(on) ≤ 15mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 128 IDM Drain Current-Single Pulsed 512 PD Total Dissipation @TC=25℃ 540 Tj Operating Junction Temperature -55~150 Tstg Storage T

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IXTK128N15 N-Channel MOSFET INCHANGE

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