IXTK128N15 Datasheet, Mosfet, INCHANGE

IXTK128N15 Features

• Mosfet
• Drain Source Voltage- : VDSS= 150V(Min)
• Static drain-source on-resistance : RDS(on) ≤ 15mΩ@VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variation

PDF File Details

Part number:

IXTK128N15

Manufacturer:

INCHANGE

File Size:

248.09kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTK128N15 Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 I

TAGS

IXTK128N15

INCHANGE

📁 Related Datasheet

IXTK128N15 - Power MOSFET (IXYS Corporation)
Advance Technical Information .. High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 12.

IXTK120N20P - PolarHT Power MOSFET (IXYS)
PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IX.

IXTK120N20P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Swi.

IXTK120N25 - Power MOSFET (IXYS Corporation)
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test c.

IXTK120N25P - PolarHT Power MOSFET (IXYS Corporation)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV.

IXTK120N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK120N65X2 IXTX120N65X2 VDSS = ID25 = RDS(on) .

IXTK100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTK102N30P - PolarHT Power MOSFET (IXYS Corporation)
.. PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbo.

IXTK102N30P - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IXTK102N30P ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% a.

IXTK102N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mo.