IXTK140N20P Datasheet, Mosfet, INCHANGE

IXTK140N20P Features

• Mosfet
• Drain Source Voltage- : VDSS= 200V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max)
• Fast Switching
• 100% avalanche tested
• Minimum

PDF File Details

Part number:

IXTK140N20P

Manufacturer:

INCHANGE

File Size:

246.35kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTK140N20P Application

• Applications
• Switch-Mode and Resonant-Mode Power Supplies
• DC-DC Converters
• AC and DC Motor Drives
• Robotics and S

TAGS

IXTK140N20P

INCHANGE

📁 Related Datasheet

IXTK140N20P - Power MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions M.

IXTK100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTK102N30P - PolarHT Power MOSFET (IXYS Corporation)
.. PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbo.

IXTK102N30P - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IXTK102N30P ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% a.

IXTK102N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mo.

IXTK110N20L2 - Power MOSFET (IXYS)
Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTK110N20L2 IXTX110N20L2 VDSS ID25 RDS(on) = 200V = 110A < 24mΩ N-Channel.

IXTK110N20L2 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High spee.

IXTK120N20P - PolarHT Power MOSFET (IXYS)
PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IX.

IXTK120N20P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Swi.

IXTK120N25 - Power MOSFET (IXYS Corporation)
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test c.