IXTP8N65X2M Datasheet, Mosfet, INCHANGE

✔ IXTP8N65X2M Features

High power dissipation
Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V
100% avalanche tested
Minimum Lot-to-Lot variations for robust device performance an

✔ IXTP8N65X2M Application

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Sou

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IXTP8N65X2M

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📄 Datasheet

Description:

N-channel mosfet.

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Stock and price

Littelfuse Inc

MOSFET N-CH 650V 4A TO220

DigiKey

IXTP8N65X2M

12 In Stock

Qty : 2000 units

Unit Price : $1.17

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IXTP8N65X2M N-Channel MOSFET INCHANGE