IXTP8N65X2M N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTP8N65X2M
Manufacturer: INCHANGE
File Size: 257.72 KB
Datasheet: IXTP8N65X2M-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* High power dissipation
* Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 32 Tj Operating Junction Temperature -55~150 Tstg Storage Tempe

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IXTP8N65X2M N-Channel MOSFET INCHANGE

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