IXTP80N12T2
IXYS
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Power mosfet.
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IXTP80N12T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche teste.
IXTP80N10T - Power MOSFET
(IXYS)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA80N10T IXTP80N10T
VDSS ID25
RDS(on)
= = ≤
100V 80A 14m.
IXTP80N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to .
IXTP80N075L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP80N075L2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTP80N075L2 - Power MOSFET
(IXYS)
Advance Technical Information
LinearL2TM Power MOSFETs w/Extended FBSOA
IXTA80N075L2 IXTP80N075L2 IXTH80N075L2
VDSS = 75V
ID25 = 80A RDS(on) 24m.
IXTP86N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP86N20T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 29mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP86N20T - Power MOSFET
(IXYS)
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalance Rated
IXTA86N20T IXTP86N20T IXTQ86N20T
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv.
IXTP88N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP88N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP88N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA88N085T IXTP88N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
IXTP8N50P - PolarHV Power MOSFET
(IXYS)
..
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 8N50P IXTP 8N50P
VDSS ID25
RDS(on)
= 500 = 8 ≤ 0.8
V .
