IXTP8N65X2, IXTY8N65X2 Datasheet - IXYS

IXTP8N65X2 - Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A 500m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C

IXTP8N65X2 Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ =

IXTY8N65X2-IXYS.pdf