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IXTP8N65X2M Datasheet - IXYS

IXTP8N65X2M - Power MOSFET

Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.)

IXTP8N65X2M Features

* International Standard Package

* Plastic Overmolded Tab

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Conver

IXTP8N65X2M-IXYS.pdf

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Datasheet Details

Part number:

IXTP8N65X2M

Manufacturer:

IXYS

File Size:

117.66 KB

Description:

Power mosfet.

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IXTP8N65X2M Power MOSFET IXYS