IXTP8N50P Datasheet, Mosfet, IXYS

IXTP8N50P Features

  • Mosfet l l l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 100µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS

PDF File Details

Part number:

IXTP8N50P

Manufacturer:

IXYS

File Size:

249.54kb

Download:

📄 Datasheet

Description:

Polarhv power mosfet.

Datasheet Preview: IXTP8N50P 📥 Download PDF (249.54kb)
Page 2 of IXTP8N50P Page 3 of IXTP8N50P

TAGS

IXTP8N50P
PolarHV
Power
MOSFET
IXYS

📁 Related Datasheet

IXTP8N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.8Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTP8N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A.

IXTP8N65X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast.

IXTP8N65X2M - Power MOSFET (IXYS)
Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhanc.

IXTP8N65X2M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested .

IXTP8N70X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Sw.

IXTP8N70X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(.

IXTP8N70X2M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP8N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·100% aval.

IXTP8N70X2M - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel E.

IXTP80N075L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP80N075L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche vol.

Stock and price

part
IXYS Corporation
MOSFET N-CH 500V 8A TO220AB
DigiKey
IXTP8N50P
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts