* l l l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 100µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 0.8 V V nA µA µA Ω International st
IXTP8N50P Datasheet (249.54 KB)
IXTP8N50P
IXYS
249.54 KB
Polarhv power mosfet.
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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 8N50P IXTP 8N50P
VDSS ID25
RDS(on)
= 500 = 8 ≤ 0.8
V .
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