MJE3055
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MJE3055 - NPN SILICON POWER TRANSISTOR
(DIGITRON)
MJE3055
High-reliability discrete products and engineering services since 1977
NPN SILICON POWER TRANSISTOR
FEATURES Available as “HR” (high reli.
MJE3055 - NPN Silicon Transistor
(Fairchild)
MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz.
MJE3055 - COMPLEMENTARY SILICON POWER TRANSISTORS
(ST Microelectronics)
MJE2955T
®
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTIO.
MJE3055 - COMPLEMENTARY SILICON POWER TRANSISTORS
(ON)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
MJE2955T * NPN MJE3055T *
.
MJE3055 - Plastic-Encapsulate Transistors
(GME)
Plastic-Encapsulate Transistors
FEATURES
DC Current Gain Specified to 10A. High Current Gain.
Pb
Lead-free
Production specification
MJE3055
TO.
MJE3055 - (MJE2955 / MJE3055) POWER TRANSISTORS
(Motorola)
..
..
.
MJE3055 - NPN Transistor
(JIANGSU CHANGJIANG ELECTRONICS)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
MJE3055 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
.
MJE3055A - Complementary Silicon power transistors
(nELL)
SEMICONDUCTOR
MJE3055A(NPN) MJE2955A(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors (10A / 60V / 75W)
FEATURES
Des.
MJE3055AT - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
MJE3055AT
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·High DC Current Gain-
: hFE= 150.
MJE3055T - Complementary Silicon Plastic Power Transistors
(ON Semiconductor)
MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and sw.