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MJE3055T - NPN Transistor

MJE3055T Description

isc Silicon NPN Power Transistor MJE3055T .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). High DC Current Gain- : hFE= 20-100@IC= 4A. Complement to Type MJE2955T.

MJE3055T Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB

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Datasheet Details

Part number
MJE3055T
Manufacturer
INCHANGE
File Size
206.09 KB
Datasheet
MJE3055T-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE3055T-like datasheet