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MJE3055T - NPN Transistor

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Part number MJE3055T
Manufacturer INCHANGE
File Size 206.09 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5

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