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MJE700T PNP Transistor

MJE700T Description

isc Silicon PNP Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -60 V. DC Current Gain. : hFE = 750(Min) @ IC= -1.

MJE700T Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4

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Datasheet Details

Part number
MJE700T
Manufacturer
INCHANGE
File Size
210.73 KB
Datasheet
MJE700T-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJE700T-like datasheet