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P5506BDA N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
P5506BDA
Manufacturer
INCHANGE
File Size
236.78 KB
Datasheet
P5506BDA-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤55mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 15 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 27 Tj Max. Operating Junction Temperature 150 Tstg Stora

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