Datasheet4U Logo Datasheet4U.com

P5506BDA N-Channel MOSFET

P5506BDA Description

isc N-Channel MOSFET Transistor *.

P5506BDA Features

* Static drain-source on-resistance: RDS(on)≤55mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

P5506BDA Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 15 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 27 Tj Max. Operating Junction Temperature 150 Tstg Stora

📥 Download Datasheet

Preview of P5506BDA PDF
datasheet Preview Page 2

Datasheet Details

Part number
P5506BDA
Manufacturer
INCHANGE
File Size
236.78 KB
Datasheet
P5506BDA-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • P5506BDG - N-Channel MOSFET (UNIKC)
  • P5506BVA - N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
  • P5506BVG - N-Channel MOSFET (UNIKC)
  • P5506HPG - Dual N-Channel MOSFET (NIKO-SEM)
  • P5506HVG - Dual N-Channel Enhancement Mode Field Effect Transistor (Niko)
  • P5506NVG - N&P-Channel MOSFET (UNIKC)
  • P5503QV - N&P-Channel MOSFET (UNIKC)
  • P5504EDG - P-Channel MOSFET (UNIKC)

📌 All Tags

INCHANGE P5506BDA-like datasheet