Datasheet4U Logo Datasheet4U.com

P5506BDG Datasheet - UNIKC

P5506BDG N-Channel MOSFET

P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 22 18 80 Power Dissipation TC = 25 °C TC = 100 °C PD 50 32 Operating Junction & Storage Temperature Range Lead Temperature (1/16" fr.

P5506BDG-UNIKC.pdf

Preview of P5506BDG PDF
P5506BDG Datasheet Preview Page 2 P5506BDG Datasheet Preview Page 3

Datasheet Details

Part number:

P5506BDG

Manufacturer:

UNIKC

File Size:

455.96 KB

Description:

N-channel mosfet.

📁 Related Datasheet

P5506BDA N-Channel MOSFET (INCHANGE)

P5506BDA N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)

P5506BDG N-Channel MOSFET (Niko)

P5506BVA N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)

P5506BVG N-Channel MOSFET (UNIKC)

P5506BVG N-Channel Logic Level Enhancement Mode Field Effect Transistor (Niko)

P5506HPG Dual N-Channel MOSFET (NIKO-SEM)

P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor (Niko)

TAGS

P5506BDG P5506BDG N-Channel MOSFET UNIKC

P5506BDG Distributor