P5504EVG - P-Channel MOSFET
P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.8 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 3.1 2 Operating Junction & Storage Temperature Range Lead Temperature (1/
