P5506BVG - N-Channel MOSFET
P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V ID 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Tc = 25 °C Tc = 70 °C ID 5.5 4.5 Pulsed Drain Current IDM 20 Power Dissipation2 Tc = 25 °C Tc = 70 °C PD 2.5 1.3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V
