P5506NVG - N&P-Channel MOSFET
P5506NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 60 55mΩ @VGS = 10V -60 80mΩ @VGS = 10V ID 4.5A -3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage SYMBOL VDS N- PChannel Channe 60 -60 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 4.5 -3.5 4 -3 Pulsed Drain Current1 IDM 20 -20 Avalanche Current IAS 18 23 Avalanche Energy
