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P5506BVA, P5506BVA-NIKO Datasheet - NIKO-SEM

P5506BVA N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P5506BVA Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ ID 4.5A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °.

P5506BVA-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: P5506BVA, P5506BVA-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

P5506BVA, P5506BVA-NIKO

Manufacturer:

NIKO-SEM

File Size:

240.03 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: P5506BVA, P5506BVA-NIKO.
Please refer to the document for exact specifications by model.

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TAGS

P5506BVA P5506BVA-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

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