P5506HVG - Dual N-Channel Enhancement Mode Field Effect Transistor
NIKO-SEM www.DataSheet4U.com Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55m ID 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS LIMITS 60 ±20 4.5 4 20 2 1.3 -55 to 150 UNITS V V TC = 25
