SPD30P06P P-Channel MOSFET

INCHANGE

SPD30P06P Description

isc P-Channel MOSFET Transistor *.

SPD30P06P Features

* Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPD30P06P Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175

📥 Download Datasheet

SPD30P06P Datasheet Preview — Preview of SPD30P06P PDF

Datasheet Details

Part number: SPD30P06P
Manufacturer: INCHANGE
File Size: 259.94 KB
Datasheet: SPD30P06P-INCHANGE.pdf
Description: P-Channel MOSFET

📁 Related Datasheet

SPD30P06PG - Power Transistor (Infineon)
SPD30N03 - SIPMOS Power Transistor (Infineon Technologies)
SPD30N03L - SIPMOS Power Transistor (Siemens Semiconductor)
SPD30N03S2L-07 - Power-Transistor (Infineon Technologies)
SPD30N03S2L-07G - Power-Transistor (Infineon Technologies)
SPD30N03S2L-10 - Power-Transistor (Infineon Technologies)
SPD30N03S2L-10G - Power-Transistor (Infineon Technologies)
SPD30N03S2L-20 - Power-Transistor (Infineon Technologies)

📌 All Tags

P-Channel MOSFET INCHANGE

INCHANGE SPD30P06P-like datasheet

SPD30N03S2L - N-Channel MOSFET
SPD02N50C3 - N-Channel MOSFET
SPD02N60C3 - N-Channel MOSFET
SPD02N60S5 - N-Channel MOSFET
SPD02N80C3 - N-Channel MOSFET
SPD03N50C3 - N-Channel MOSFET