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SPP08N80C3

The SPP08N80C3 is N-Channel MOSFET designed by INCHANGE.

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Datasheet Details

Part number SPP08N80C3
Manufacturer INCHANGE
File Size 243.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SPP08N80C3-INCHANGE.pdf
Additional preview pages of the SPP08N80C3 datasheet.

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Description

High peak current capability Ultra low gate charge Ultra low effective capacitances ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 104 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha

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