STI30N65M5 - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

STI30N65M5 Datasheet Preview — Preview of STI30N65M5 PDF

Datasheet Details

Part number	STI30N65M5
Manufacturer	INCHANGE
File Size	309.94 KB
Description	N-Channel MOSFET
Datasheet	STI30N65M5-INCHANGE.pdf

STI30N65M5 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 140 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, J

Features

Drain Current.
ID=22A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 139mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 STI30N65M5 Similar Datasheet

STI30NM50N - Power MOSFET (STMicroelectronics)
STI30NM60N - N-channel MOSFET (STMicroelectronics)
STI30NM60ND - N-channel Power MOSFET (STMicroelectronics)
STI300N4F6 - N-channel Power MOSFET (STMicroelectronics)
STI3220 - Motion Estimation Processor (ST Microelectronics)
STI32N65M5 - N-channel MOSFET (STMicroelectronics)
STI33N60M2 - N-Channel Power MOSFET (STMicroelectronics)
STI33N65M2 - N-channel Power MOSFET (STMicroelectronics)

Other Datasheets by INCHANGE

STI34N65M5 - N-Channel MOSFET
STI35N65M5 - N-Channel MOSFET
STI11NM60ND - N-Channel MOSFET
STI12N65M5 - N-Channel MOSFET
STI13NM60N - N-Channel MOSFET
STI14NM50N - N-Channel MOSFET

Published: Dec 8, 2020 |