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STI30N65M5 N-Channel MOSFET

STI30N65M5 Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS.

STI30N65M5 Features

* Drain Current
* ID=22A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 139mΩ(Max)
* 100% avalanche tested

STI30N65M5 Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 140 W TJ Max.

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Datasheet Details

Part number
STI30N65M5
Manufacturer
INCHANGE
File Size
309.94 KB
Datasheet
STI30N65M5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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