STI30NM60N Datasheet - STMicroelectronics

STI30NM60N N-channel MOSFET

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding hig.

STI30NM60N Features

* Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max

STI30NM60N_STMicroelectronics.pdf