STP11NM60ND Datasheet - INCHANGE

STP11NM60ND - N-Channel MOSFET

STP11NM60ND Features

* Drain Current

* ID= 6.3A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

* Switching appl

Datasheet Details

STP11NM60ND

INCHANGE

271.44 KB

N-channel mosfet.

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