STP11NM65N TO-220F N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor STP11NM65N .

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Datasheet Specifications

Part number: STP11NM65N
Manufacturer: INCHANGE
File Size: 260.91 KB
Datasheet: STP11NM65N-INCHANGE.pdf
Description: TO-220F N-Channel MOSFET

Features

* Drain Current
* ID= 44A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 44 A PD Total Dissipation @TC=25℃ 25 W TJ Max. Op

STP11NM65N Distributors

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STP11NM65N TO-220F N-Channel MOSFET INCHANGE

INCHANGE STP11NM65N-like datasheet