STP11NM65N Datasheet - INCHANGE

STP11NM65N, TO-220F N-Channel MOSFET

isc N-Channel MOSFET Transistor STP11NM65N

Features

* Drain Current
* ID= 44A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 44 A PD Total Dissipation @TC=25℃ 25 W TJ Max.
Op

STP11NM65N-INCHANGE.pdf