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STP11NM65N TO-220 N-Channel MOSFET

STP11NM65N Description

isc N-Channel MOSFET Transistor STP11NM65N .

STP11NM65N Features

* Drain Current
* ID= 44A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max)
* 100% avalanche tested

STP11NM65N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 44 A PD Total Dissipation @TC=25℃ 110 W TJ Max. O

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Datasheet Details

Part number
STP11NM65N
Manufacturer
INCHANGE
File Size
270.19 KB
Datasheet
STP11NM65N_INCHANGE.pdf
Description
TO-220 N-Channel MOSFET

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TO-220 N-Channel MOSFET INCHANGE
INCHANGE STP11NM65N-like datasheet