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STP11NM65N Datasheet - INCHANGE

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STP11NM65N TO-220 N-Channel MOSFET

isc N-Channel MOSFET Transistor STP11NM65N .

STP11NM65N_INCHANGE.pdf

Preview of STP11NM65N PDF

Datasheet Details

Part number:

STP11NM65N

Manufacturer:

INCHANGE

File Size:

270.19 KB

Description:

TO-220 N-Channel MOSFET

Features

* Drain Current
* ID= 44A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 44 A PD Total Dissipation @TC=25℃ 110 W TJ Max. O

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