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TK12A80W TO-220 N-Channel MOSFET

TK12A80W Description

iscN-Channel MOSFET Transistor TK12A80W *.

TK12A80W Features

* Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX)
* Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSO

TK12A80W Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TK12A80W
Manufacturer
INCHANGE
File Size
280.16 KB
Datasheet
TK12A80W_INCHANGE.pdf
Description
TO-220 N-Channel MOSFET

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TO-220 N-Channel MOSFET INCHANGE
INCHANGE TK12A80W-like datasheet