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TK290P60Y N-Channel MOSFET

TK290P60Y Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P60Y *.

TK290P60Y Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

TK290P60Y Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 11.5 7.3 46 PD Total Dissipation @TC=25℃ 100 Tch Max. Operatin

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Datasheet Details

Part number
TK290P60Y
Manufacturer
INCHANGE
File Size
204.46 KB
Datasheet
TK290P60Y-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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